Title of article
Study of AlN coatings for microstrip gas chambers
Author/Authors
A. and Buzulutskov، نويسنده , , A. and Bondar، نويسنده , , A. and Mironenko، نويسنده , , L. and Nagaslaev، نويسنده , , V. and Shekhtman، نويسنده , , L. and Tatarinov، نويسنده , , A. and Kascheev، نويسنده , , S. and Blaut-Blachev، نويسنده , , A. and Bouilov، نويسنده , , L. and Spitsyn، نويسنده , , B.، نويسنده ,
Pages
4
From page
33
To page
36
Abstract
A new semiconducting coating material for microstrip gas chambers (MSGCs) has been studied: AlN. The conductivity of AlN films at room temperature varies from 10−10 to 10−12 Ω−1 cm−1 depending on the preparation conditions; it increases with temperature with an activation energy of 0.8–0.9 eV. The electron-induced secondary electron emission yield from AlN has been measured: it is about 5 at the maximum. The influence of the substrate nature and that of the film’s preparation conditions on the composition of AlN films are investigated using X-ray photoelectron spectroscopy.
Journal title
Astroparticle Physics
Record number
2004702
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