Author/Authors :
Chmill، نويسنده , , V.B and Chuntonov، نويسنده , , A.V. and Smol، نويسنده , , A.V and Vorobiev، نويسنده , , A.P and Khludkov، نويسنده , , S.S and Koretski، نويسنده , , A.A and Okaevitch، نويسنده , , L.S and Potapov، نويسنده , , A.I and Stepanov، نويسنده , , V.E. and Tolbanov، نويسنده , , O.P and Smith، نويسنده , , K.M، نويسنده ,
Abstract :
Some GaAs properties are presented in comparison with Si. Tomsk technology has proposed non-traditional way of a sensitive layer creation. As a result the radiation hardness of these detectors is up to 1015 n/cm2 at a neutron fluence and up to 2 × 1014 p/cm2 at a proton fluence. Due to a high concentration of impurity, the detector is capable of collecting a charge by itself without external bias. A previous beam test results of GaAs 50 μm pitch microstrip detector prototype were reconsidered from the spatial resolution aspect. The proposal was to try a new topology: a 25 μm pitch strips tied in pairs. In relation to readout and analysis it resembles a 50 μm microstrip detector. A preliminary simulation has shown ∼9 μm resolution instead of 14.4 μm.
