Author/Authors :
Bates، نويسنده , , R and Campbell، نويسنده , , M and Cantatore، نويسنده , , E and DʹAuria، نويسنده , , S and DaVià، نويسنده , , C and del Papa، نويسنده , , C and Heijne، نويسنده , , E.M and Middelkamp، نويسنده , , P and OʹShea، نويسنده , , V and Raine، نويسنده , , J. and Ropotar، نويسنده , , I and Scharfetter، نويسنده , , L and Smith، نويسنده , , K and Snoeys، نويسنده , , W، نويسنده ,
Abstract :
GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV π− beam. The detection efficiency was 99.2% with a nominal threshold of 5000 e−.
