Title of article :
Reverse current in SI GaAs pixel detectors
Author/Authors :
Cola، نويسنده , , A، نويسنده ,
Pages :
7
From page :
85
To page :
91
Abstract :
A study of the carrier transport mechanism has been carried out on semi-insulating GaAs X-ray detectors. The aim is to analyze the excess current (larger than thermionic values), breakdown mechanisms and non-uniformities of the electric field in actual devices.
Journal title :
Astroparticle Physics
Record number :
2005270
Link To Document :
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