Title of article
The impact of deep acceptors on the performance of VPE-GaAs X-ray detectors
Author/Authors
Rogalla، نويسنده , , M and Lien، نويسنده , , Y and Percival، نويسنده , , R and Hornung، نويسنده , , M and Ludwig، نويسنده , , J and Irsigler، نويسنده , , R and Runge، نويسنده , , Th. and Sِldner-Rembold، نويسنده , , A and Meinhardt، نويسنده , , J and Feldgen، نويسنده , , T and Fiederle، نويسنده , , M and Benz، نويسنده , , K.W، نويسنده ,
Pages
4
From page
92
To page
95
Abstract
Gallium Arsenide layers grown using low pressure Vapour-Phase Epitaxy (LP-VPE) were studied with CV, Hall-measurements and Photoluminescence. The results have been analysed for the general investigation of the influence of material properties on particle detector performance for X-ray applications. This p-type material exhibits a free carrier concentration of 1.3 × 1011 cm−3 at room temperature and was compensated by the presence of shallow donors and deep acceptors. Because of this, the detector performance was restricted by the space-charge density of the order of 1014 cm−3.
Journal title
Astroparticle Physics
Record number
2005274
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