A theoretical model for ferroelectric polarization-controlled superconductor devices

Polarization-controlled superconductor devices could be used as a logic gate or other electronic units such as acoustic sensors, electro-optical transducers and image detectors. Lin and Wu (Appl. Phys. Lett. 65 (8) (1994) 1) have experimentally investigated the I–V characteristics of such a device. In this paper, we propose a theoretical model to calculate the polarization effect on the I–V curves. The polarization effects include the cause of the superconducting-normal state switching and exponential time dependence of the source-drain voltage. We fit the experimental data with the theoretical model. They agree quite well.