Title of article
Delta-ray production in silicon tracking systems for 2–50 GeV electrons
Author/Authors
Hou، نويسنده , , S.R. and Ambrosi، نويسنده , , G. and Burger، نويسنده , , W.J. and Chang، نويسنده , , Y.H. and Chen، نويسنده , , A.E. and Lin، نويسنده , , W.T. and Produit، نويسنده , , N. and Ribordy، نويسنده , , M.، نويسنده ,
Pages
9
From page
145
To page
153
Abstract
The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2–50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of Tcut=500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3% within an angular region of 1–50 mrad.
Journal title
Astroparticle Physics
Record number
2007045
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