Author/Authors :
Hou، نويسنده , , S.R. and Ambrosi، نويسنده , , G. and Burger، نويسنده , , W.J. and Chang، نويسنده , , Y.H. and Chen، نويسنده , , A.E. and Lin، نويسنده , , W.T. and Produit، نويسنده , , N. and Ribordy، نويسنده , , M.، نويسنده ,
Abstract :
The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2–50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of Tcut=500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3% within an angular region of 1–50 mrad.
