Title of article
The double-gate p-JFET-inputted amplifier for low-capacitance detectors
Author/Authors
Baturitsky، نويسنده , , M.A and Dvornikov، نويسنده , , O.V.، نويسنده ,
Pages
6
From page
99
To page
104
Abstract
The low-noise monolithic double-gate p-JFET-inputted amplifier for detectors with capacitance up to 30 pF is described.
Keywords
Noise , Charge sensitive amplifier , Monolithic , field effect transistor
Journal title
Astroparticle Physics
Record number
2007231
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