Title of article
Carrier lifetimes in heavily irradiated silicon diodes
Author/Authors
Beattie، نويسنده , , L. and Brodbeck، نويسنده , , T.J and Chilingarov، نويسنده , , A. and Hughes، نويسنده , , G. and McGarry، نويسنده , , S. and Ratoff، نويسنده , , Claudia P. and Sloan، نويسنده , , T.، نويسنده ,
Pages
10
From page
502
To page
511
Abstract
Charge collection efficiencies for both minimum ionising and α-particle illumination have been measured for planar diodes which had been irradiated with fluences up to 3×1014 equivalent 1 MeV neutrons cm−2. These charge collection efficiencies have been fitted with a simple model and the carrier lifetimes extracted. The lifetimes are consistent with extrapolations of previous results at lower fluences. There is evidence of extra complication due to the heavy irradiation.
Keywords
carrier lifetime , Irradiated silicon
Journal title
Astroparticle Physics
Record number
2007947
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