First results on radiation damage studies using n+/p/p+ diodes fabricated with multi-guard ring structures

First measurements of silicon PIN diodes and multi-guard structures, fabricated from 10 kΩ cm p-type material in an n+/p/p+ configuration are presented. Studies of the effects of irradiation with 2.0×1014 p/cm2 at 63.3 MeV on the charge collection efficiency, leakage current, and breakdown are presented, along with studies of different guard ring configurations.