Author/Authors :
Abt، نويسنده , , I. and Masciocchi، نويسنده , , S. and Moshous، نويسنده , , B. and Perschke، نويسنده , , T. and Richter، نويسنده , , R.H. and Riechmann، نويسنده , , K. and Wagner، نويسنده , , W.، نويسنده ,
Abstract :
An infrared laser system with variable wavelength is used to study fundamental properties of silicon microstrip detectors. Results of measurements concerning charge sharing among adjacent readout strips and depletion mapping are presented. The results are interpreted in a model framework which describes the charge sharing with the help of the so-called η-function. The wavelength dependence of the η-function is studied. Surface effects important for short wavelengths are observed.
Keywords :
Silicon microstrip detector , Charge sharing , Infrared laser , Depletion mapping
