Author/Authors :
Augelli، نويسنده , , V. and Contento، نويسنده , , G. and Ligonzo، نويسنده , , T. and Muscarella، نويسنده , , M.F. and Schiavulli، نويسنده , , L. and Angarano، نويسنده , , M. and Creanza، نويسنده , , D. and de Palma، نويسنده , , M.، نويسنده ,
Abstract :
Pure and oxygenated n-type silicon samples have been characterized by Hall mobility and conductivity measurements as a function of temperature, before and after irradiation. p+n silicon diodes have been characterized by C–V and reverse current measurements as a function of temperature. Investigated samples have been grown by FZ technique in Polovodice (Prague) and have been irradiated with protons at CERN facilities (Φ=4×1012–1014 protons/cm2). Carrier concentrations have been evaluated by conductivity and Hall mobility measurements. C–V measurements on irradiated diodes (Φ≅1012 protons/cm2) show a decrease of the effective concentration Neff with respect to unirradiated samples. Reverse current measurements as a function of temperature show that oxygenated diode has a leakage current lower than that of pure diode at temperatures less than 250 K.
