A CAD investigation of depletion mechanisms in irradiated silicon microstrip detectors

The numerical simulation of a silicon microstrip detector is discussed. Physical models for the bulk radiation damage have been taken into account, based on a generalized Shockley–Read–Hall expression of the recombination rate. The actual shape of depletion layer, depending on the radiation fluence, has been investigated. The build-up of a dual depletion layer, as reported in some literature works, has been described and interpreted.