Title of article :
Spatial mapping of cadmium zinc telluride materials properties and electrical response to improve device yield and performance
Author/Authors :
Van Scyoc، نويسنده , , J.M and Brunett، نويسنده , , B.A and Yoon، نويسنده , , H and Gilbert، نويسنده , , T.S and Hilton، نويسنده , , N.R and Lund، نويسنده , , J.C and James، نويسنده , , R.B، نويسنده ,
Pages :
7
From page :
1
To page :
7
Abstract :
Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.
Keywords :
Electrical characterization , cadmium zinc telluride , CZT , Uniformity
Journal title :
Astroparticle Physics
Record number :
2008948
Link To Document :
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