Title of article
Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation
Author/Authors
Angarano، نويسنده , , M.M and Bلder، نويسنده , , A and Creanza، نويسنده , , D and de Palma، نويسنده , , M and Fiore، نويسنده , , L and Maggi، نويسنده , , G and My، نويسنده , , S and Raso، نويسنده , , G and Selvaggi، نويسنده , , G and Tempesta، نويسنده , , P، نويسنده ,
Pages
12
From page
336
To page
347
Abstract
Capacitance, resistance and current measurements were carried out on single-sided, n+ on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8.3×1013 neutron/cm2. To understand the macroscopic irradiation effects, a SPICE model of the detector was developed. Simulating the capacitance measurements, we were able to reproduce the measured frequency dependence of the relevant capacitances, both for non-irradiated and for irradiated detectors.
Keywords
Silicon detector , capacitance , Neutron irradiation
Journal title
Astroparticle Physics
Record number
2009005
Link To Document