Author/Authors :
Novلk، نويسنده , , D. and Kerek، نويسنده , , A. and Klamra، نويسنده , , W. and Norlin، نويسنده , , L.-O. and Bagge، نويسنده , , L. and Kنllberg، نويسنده , , A. and Paلl، نويسنده , , A. and Rensfelt، نويسنده , , K.-G. and Molnلr، نويسنده , , J.، نويسنده ,
Abstract :
A measuring station has been built at the CRYRING heavy ion accelerator to test the Single Event Upset (SEU) phenomena in working Static RAM circuits. The setup extracts the beam using Rutherford scattering and the ions are monitored with a BaF2 scintillator. SEU measurements have been performed for standard bulk CMOS memory circuits.
Keywords :
Beam extraction , Heavy ions , Single event upset , BaF2 scintillator , Radiation hardness
