Author/Authors :
Pagano، نويسنده , , R. and Lombardo، نويسنده , , S. and Palumbo، نويسنده , , F. and Sanfilippo، نويسنده , , D. and Valvo، نويسنده , , G. and Fallica، نويسنده , , G. and Libertino، نويسنده , , S.، نويسنده ,
Abstract :
Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
Keywords :
Radiation damage , Radiation hardness , gamma rays , Silicon PhotoMultiplier
