Title of article
Characterization of CdZnTe co-doped with indium and lead
Author/Authors
Zaman، نويسنده , , Yasir and Jie، نويسنده , , Wanqi and Wang، نويسنده , , Tao and He، نويسنده , , Yihui and Xu، نويسنده , , Lingyan and Guo، نويسنده , , Rongrong and Xu، نويسنده , , Yadong and Zha، نويسنده , , Gangqiang، نويسنده ,
Pages
4
From page
48
To page
51
Abstract
Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I–V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I–V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8×1010 Ω cm, and the mobility (µ) of about 868 cm2/V s, which is considered acceptable for detector’s fabrication. However, the carrier life time (τ) was only 9.44×10−7 s. Therefore, the µτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.
Keywords
A1 Defects , A1 Characterization , A1 Doping , B1 Cadmium compounds , A2 Bridgman technique
Journal title
Astroparticle Physics
Record number
2009691
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