Title of article
Analysis of radiation effects on silicon strip detectors in the NA50 experiment
Author/Authors
Alessandro، نويسنده , , B and Beolé، نويسنده , , S and Bonazzola، نويسنده , , G. and Crescio، نويسنده , , E and Da?browski، نويسنده , , W and Giubellino، نويسنده , , P and Grybos، نويسنده , , P and Idzik، نويسنده , , M and Martinetto، نويسنده , , M and Marzari-Chiesa، نويسنده , , A and Masera، نويسنده , , M and Prino، نويسنده , , F and Ramello، نويسنده , , L. and Rato Mendes، نويسنده , , P and Riccati، نويسنده , , L and Sitta، نويسنده , , M، نويسنده ,
Pages
16
From page
342
To page
357
Abstract
During the operation of the Multiplicity Detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences resulting in an equivalent 1 MeV neutron fluence up to 1014 eq. n/cm2 and a total ionising dose up to 20 Mrad, with a very non-uniform radiation spatial distribution. In this paper detailed analysis of radiation effects observed on the detectors during the 1996 lead ion run as well as results of measurements performed after the run are presented.
Journal title
Astroparticle Physics
Record number
2009693
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