Title of article
Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance
Author/Authors
Rogalla، نويسنده , , M and Runge، نويسنده , , K، نويسنده ,
Pages
13
From page
44
To page
56
Abstract
A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed. The model is based on a field-enhanced electron capture of the EL2-defect. The influence of the compensation mechanism in SI-GaAs on the field distribution, leakage current density and charge collection properties of the detectors will be discussed. The detailed understanding allows then a device optimization.
Keywords
Particle detectors , SI-GaAs , Field-enhanced electron capture
Journal title
Astroparticle Physics
Record number
2009950
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