Author/Authors :
Vaitkus، نويسنده , , J. and Gaubas، نويسنده , , E. and Kazukauskas، نويسنده , , V. and Rinkevicius، نويسنده , , V. and Storasta، نويسنده , , J. and Tomasiunas، نويسنده , , R. and Smith، نويسنده , , K.M. and OʹShea، نويسنده , , V.، نويسنده ,
Abstract :
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high-resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.
