Author/Authors :
Rivetti، نويسنده , , A. Mark Battaglia، نويسنده , , M. and Bisello، نويسنده , , D. and Caselle، نويسنده , , M. and Chalmet، نويسنده , , P. and Costa، نويسنده , , M. and Demaria، نويسنده , , N. and Giubilato، نويسنده , , P. and Ikemoto، نويسنده , , Y. and Kloukinas، نويسنده , , K. and Mansuy، نويسنده , , C. and Marchioro، نويسنده , , A. and Mugnier، نويسنده , , H. and Pantano، نويسنده , , D. and Potenza، نويسنده , , A. and Rousset، نويسنده , , J. and Silvestrin، نويسنده , , L. and Wyss، نويسنده , , J.، نويسنده ,
Abstract :
The LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Ω cm , which is at least one order of magnitude greater than the typical value ( 1 – 10 Ω cm ) adopted for integrated circuit production. The possibility of employing these lightly doped substrates was offered by one foundry for an otherwise standard 90 nm CMOS process. In the paper, the case for such a development is first discussed. The sensor design is then described, along with the key challenges encountered in fabricating the detecting element in a very deep submicron process. Finally, irradiation results obtained on test matrices are reported.
Keywords :
CMOS technologies , Monolithic sensors , Radiation tolerance , Lightly doped substrates
