Title of article
Radiation damage studies of multi-guard ring p-type bulk diodes
Author/Authors
Bortoletto، نويسنده , , D and Bolla، نويسنده , , G and Guenther، نويسنده , , M and Grim، نويسنده , , G.P. and Lander، نويسنده , , R.L and Willard، نويسنده , , S and Li، نويسنده , , Z، نويسنده ,
Pages
9
From page
178
To page
186
Abstract
Several diodes with different multi-guard ring structures were fabricated from 10 kΩ cm p-type bulk material. Studies on the performance of such devices are presented here. They include the measurement of the leakage current, breakdown voltage and charge collection efficiency before and after 2×1014 p/cm2 irradiation with 63.3 MeV kinetic protons.
Keywords
Radiation damage , Silicon
Journal title
Astroparticle Physics
Record number
2010088
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