Author/Authors :
Bomben، نويسنده , , M. and Bagolini، نويسنده , , A. and Boscardin، نويسنده , , M. and Bosisio، نويسنده , , L. and Calderini، نويسنده , , G. and Chauveau، نويسنده , , J. and Giacomini، نويسنده , , G. and La Rosa، نويسنده , , A. and Marchiori، نويسنده , , G. De Zorzi، نويسنده , , N.، نويسنده ,
Abstract :
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
