Author/Authors :
Hara، نويسنده , , K and Hata، نويسنده , , K and Kanao، نويسنده , , K and Kim، نويسنده , , S and Ogasawara، نويسنده , , M and Ohsugi، نويسنده , , T and Shimojima، نويسنده , , M and Takikawa، نويسنده , , K، نويسنده ,
Abstract :
Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4″ technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207°. The strip pitch is 112 μm on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after 60Co γ irradiation.
