Author/Authors :
Fadeyev، نويسنده , , V. and Sadrozinski، نويسنده , , H.F.-W. and Ely، نويسنده , , S. and Wright، نويسنده , , J.G. and Christophersen، نويسنده , , M. and Phlips، نويسنده , , B.F. and Pellegrini، نويسنده , , G. and Grinstein، نويسنده , , S. and Dalla Betta، نويسنده , , G.-F. and Boscardin، نويسنده , , M. and Klingenberg، نويسنده , , R. and Wittig، نويسنده , , T. and Macchiolo، نويسنده , , A. and Weigell، نويسنده , , P. and Creanza، نويسنده , , D. and Bates، نويسنده , , Kevin R. and Blue، نويسنده , , A. and Eklund، نويسنده , , L. and Maneuski، نويسنده , , D. and Stewart، نويسنده , , G. and Casse، نويسنده , , G. and Gorelov، نويسنده , , I. and Hoeferkamp، نويسنده , , M. E. METCALFE، نويسنده , , J. and Seidel، نويسنده , , S. and Kramberger، نويسنده , , G.، نويسنده ,
Abstract :
We are pursuing scribe–cleave–passivate (SCP) technology of making “slim edge” sensors. Such sensors have only a minimal amount of inactive peripheral region, which benefits construction of large-area tracker and imaging systems. Key application steps of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We are working on developing both the technology and physical understanding of the processed devices performance. In this paper we begin by reviewing the manufacturing options of SCP technology. Then we show new results regarding the technology automation and device physics performance. The latter includes charge collection efficiency near the edge and radiation hardness study. We also report on the status of devices processed at the request of the RD50 collaborators.
Keywords :
Silicon , Active area , scribing , Cleaving , passivation , Slim edge
