Development of optical switching readout X-ray detector for high-speed imaging

In this study, we demonstrated the feasibility of an X-ray detector with a dual amorphous-selenium (a-Se) layer using an optical switching readout for high-speed X-ray imaging. The X-ray detector consists of a negative voltage bias electrode; a thick a-Se layer for the photoelectric conversion of X-ray photons; an As2Se3 layer employed as an electron-trapping layer for accumulating latent images; a thin a-Se layer for optical readout; alternate opaque and transparent electrodes; and an optical light source for the optical switching readout. The line light of the optical light source, which has a peak wavelength of 470 nm, is operated line by line using electrical scanning for high-speed X-ray imaging. The developed X-ray detector has a pixel pitch of 200 μm with 512 channels.