Author/Authors :
Dragicevic، نويسنده , , M. and Bartl، نويسنده , , U. and Bergauer، نويسنده , , T. and Frühwirth، نويسنده , , E. and Gamerith، نويسنده , , S. and Hacker، نويسنده , , J. and Krِner، نويسنده , , F. and Kucher، نويسنده , , E. and Moser، نويسنده , , J. and Neidhart، نويسنده , , T. and Schulze، نويسنده , , A. and Schustereder، نويسنده , , W. and Treberspurg، نويسنده , , W. and Wübben، نويسنده , , T.، نويسنده ,
Abstract :
Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors are capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European semiconductor manufacturer Infineon Technologies Austria AG the Institute of High Energy Physics of the Austrian Academy of Sciences developed planar silicon strip sensors in p-on-n technology. This paper presents the development, production and results from the electrical characterisation of the first sensors produced by Infineon.
Keywords :
Silicon sensor , Planar strip sensor , P-on-n , Semiconductor production
