Title of article
Characterization of irradiation induced deep and shallow impurities
Author/Authors
W. and Treberspurg، نويسنده , , Wolfgang and Bergauer، نويسنده , , Thomas and Dragicevic، نويسنده , , Marko and Krammer، نويسنده , , Manfred and Valentan، نويسنده , , Manfred، نويسنده ,
Pages
5
From page
173
To page
177
Abstract
Silicon Detectors close to the interaction point of the High Luminosity Large Hardron Collider (HL-LHC) have to withstand a harsh irradiation environment. In order to evaluate the behaviour of shallow and deep defects, induced by neutron irradiation, spreading resistance resistivity measurements and capacitance voltage measurements have been performed. These measurements, deliver information about the profile of shallow impurities after irradiation as well as indications of deep defects in the Space Charge Region (SCR) and the Electrical Neutral Bulk (ENB). By considering the theoretical background of the measurement both kinds of defects can be investigated independently from each other.
Keywords
Radiation damage evaluation methods , Si microstrip and pad detectors , Radiation damage to detector materials (solid state) , Radiation hard detectors
Journal title
Astroparticle Physics
Record number
2010362
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