Characterization and simulation of resistive-MPGDs with resistive strip and layer topologies

The use of resistive technologies on Micro-Pattern Gaseous Detectors (MPGDs) brings about several advantages for many new applications, including the ones in high rate and energetic particle flux scenarios. The recent use of these technologies in large area detectors makes necessary to understand and characterize the response of this type of detectors in order to optimize or constrain the parameters used in its production, material resistivity, strip width, or layer thickness. The values to be chosen will depend on the environmental conditions in which the detector will be placed, and on the requirements in time resolution and gain, improving the detector performance for each given application. We present two different methods to calculate the propagation of charge diffusion through different resistive topologies: one is based on a Finite Element Method (FEM) of solving the telegraph equation in our particular strip detector scheme, the other is based on a semi-analytical approach of charge diffusion and is used to determine the charge evolution in a resistive layer.