Determination of the electron–hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

Ionizing radiation can be detected by the measurement of the charge carriers produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to be designed. The mean energy required for producing an electron–hole pair, W, is a material property of the semiconductor. Here, the determination of W from the spectral responsivity of photodiodes is demonstrated. Using spectrally dispersed synchrotron radiation, different types of semiconductor photodiodes have been examined in the UV-, VUV-, and soft X-ray spectral range. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p junction photodiodes and for GaAsP/Au Schottky diodes at room temperature. The investigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W=(3.66±0.03) eV for photon energies above 50 eV, a maximum value of W=4.4 eV at photon energies around 6 eV, and a linear relation W=hν (one electron per photon) for photon energies below 4 eV. For GaAsP, we obtained a constant value of W=4.58 eV in the photon energy range from 150 to 1500 eV, with a relative uncertainty of 1–3%, depending on the photon energy.