Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy

Optical charging spectroscopy (OCS) is first time reported as applied to p–n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p+–n–n+ silicon structures. An analytical formula for the OCS discharging current for this type of structures was deduced.