Title of article
Design and test of radiation hard p+n silicon strip detectors for the ATLAS SCT
Author/Authors
Andricek، نويسنده , , L. and Hauff، نويسنده , , D. and Kemmer، نويسنده , , J. and Koffeman، نويسنده , , E. and Lükewille، نويسنده , , P. and Lutz، نويسنده , , G. and Moser، نويسنده , , H.G. and Richter، نويسنده , , R.H. and Rohe، نويسنده , , T. and Soltau، نويسنده , , H. and Viehl، نويسنده , , A.، نويسنده ,
Pages
15
From page
427
To page
441
Abstract
Strip detectors covering radiation hardness and large-scale production ability are developed and produced for the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Switzerland). Capacitively coupled p+n detectors (p-type strips on n-type substrate) were developed with implanted bias resistors in order to simplify the detector processing addressing the requirements of large-scale production. The detectors were irradiated with 24 GeV protons up to 3×1014 cm−2 in order to simulate a 10 years operation scenario at LHC. The presented static and signal measurements demonstrate the function of the device concept before and after irradiation.
Keywords
Radiation hardness , Implanted resistors , Silicon detectors
Journal title
Astroparticle Physics
Record number
2010561
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