Evaluation of the Timepix chip radiation hardness using a 60Co source

Radiation damage is a widely studied topic for its effects on detectors and supporting electronics in various practical applications. Radiation hardness and stability of the detector properties are critical parameters in applications of semiconductor radiation detectors. The 0.25 μ m CMOS technology used in fabrication of the Medipix2 and Timepix chips provides high degree of inherent radiation hardness. We present the study of operational, detection and signal processing properties of the irradiated Timepix chip exposed to a high-flux 60Co source reaching the operational limits of the chip.