Author/Authors :
Luke، نويسنده , , P.N. and Amman، نويسنده , , M. and Lee، نويسنده , , J.S. and Yaver، نويسنده , , H.، نويسنده ,
Abstract :
A three-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented.