Author/Authors :
Markov، نويسنده , , A.V. and Polyakov، نويسنده , , A.Y. and Smirnov، نويسنده , , N.B. and Govorkov، نويسنده , , A.V. and Eremin، نويسنده , , V.K. and Verbitskaya، نويسنده , , E.M. and Gavrin، نويسنده , , V.N. and Kozlova، نويسنده , , Y.P. and Veretenkin، نويسنده , , Y.P. and Bowles، نويسنده , , T.J.، نويسنده ,
Abstract :
Semi-insulating GaAs crystals grown by liquid encapsulated Czochralski technique from Ga-rich melts were evaluated as a possible material for radiation detectors with a high active layer thickness. The density of deep traps, particularly the midgap EL2 donors pinning the Fermi level, was measured by various techniques in conducting and semi-insulating samples. For EL2 traps, a direct evidence of their partial neutralization in the space charge region of reverse biased Schottky diodes due to nonequilibrium capture of electrons is presented for the first time. It is shown that the density of EL2 centers decreases with decreased As composition of the melt very gradually, especially for post-growth annealed samples. Subsequently, if one aims to decrease the EL2 density to such an extent that it would make a serious impact on the depletion layer width in GaAs-based detectors one has to grow semi-insulating GaAs crystals from melts with As composition below about 43% which poses a problem for the preservation of high resistivity of the material due to the relatively high concentration of compensating acceptors.
