Author/Authors :
Miyoshi، نويسنده , , Toshinobu and Arai، نويسنده , , Yasuo and Chiba، نويسنده , , Tadashi and Fujita، نويسنده , , Yowichi and Hara، نويسنده , , Kazuhiko and Honda، نويسنده , , Shunsuke and Igarashi، نويسنده , , Yasushi and Ikegami، نويسنده , , Yoichi and Ikemoto، نويسنده , , Yukiko and Kohriki، نويسنده , , Takashi and Ohno، نويسنده , , Morifumi and Ono، نويسنده , , Yoshimasa and Shinoda، نويسنده , , Naoyuki and Takeda، نويسنده , , Ayaki and Tauchi، نويسنده , , Kazuya and Tsuboyama، نويسنده , , Toru and Tadokoro، نويسنده , , Hirofumi and Unno، نويسنده , , Yoshinobu and Yanagihara، نويسنده , , Masashi، نويسنده ,
Abstract :
Truly monolithic pixel detectors were fabricated with 0.2 μ m SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We can choose the handle wafer and therefore high-resistivity silicon is also available. Double SOI (D-SOI) wafers fabricated from Czochralski (CZ)-SOI wafers were newly obtained and successfully processed in 2012. The top SOI layers are used as electric circuits and the middle SOI layers used as a shield layer against the back-gate effect and cross-talk between sensors and CMOS circuits, and as an electrode to compensate for the total ionizing dose (TID) effect. In 2012, we developed two SOI detectors, INTPIX5 and INTPIX3g. A spatial resolution study was done with INTPIX5 and it showed excellent performance. The TID effect study with D-SOI INTPIX3g detectors was done and we confirmed improvement of TID tolerance in D-SOI sensors.
