Author/Authors :
Borer، نويسنده , , K. and Janos، نويسنده , , S. and Palmieri، نويسنده , , V.G. and Dezillie، نويسنده , , B. and Li، نويسنده , , Z. and Collins، نويسنده , , P. and Niinikoski، نويسنده , , T.O. and Lourenço، نويسنده , , C. and Sonderegger، نويسنده , , P. and Borchi، نويسنده , , E. and Bruzzi، نويسنده , , M. and Pirollo، نويسنده , , S. and Granata، نويسنده , , V. and Pagano، نويسنده , , S. and Chapuy، نويسنده , , S. and Dimcovski، نويسنده , , Z. ، نويسنده ,
Abstract :
The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2×1015 n/cm2 yields a MIP signal of at least 15000 e− both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The “Lazarus effect” was thus shown to extend to fluences at least ten times higher than was previously studied.
