Performance estimation of InSb compound semiconductor detectors as a function of active area using alpha particles

We have fabricated radiation detectors using p-type indium antimonide crystals grown by liquid phase epitaxy (LPE). The current–voltage curves, energy spectra of alpha particles, and energy resolutions obtained using two different InSb detectors were compared. The alpha-particle energy resolutions were 1.8% at 24 and 42 K, using the LPE–InSb detector with wafer size of 1.0×1.5 mm2.