Effects of post-growth annealing on the performance of CdZnTe: In radiation detectors with different thickness

An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μτ)e value were enhanced about 63% and 115%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μτ)e value were enhanced about 300% and 88%, respectively.