Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450–600 nm is one of the critical issues for experimental physics – registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (105–106) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the “needle” pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.