Title of article :
CDF Run II silicon vertex detector annealing study
Author/Authors :
Stancari، نويسنده , , M. and Knoepfel، نويسنده , , K. and Behari، نويسنده , , S. and Christian، نويسنده , , D. and Di Ruzza، نويسنده , , B. and Jindariani، نويسنده , , S. and Junk، نويسنده , , T.R. and Mattson، نويسنده , , M. and Mitra، نويسنده , , A. and Mondragon، نويسنده , , M.N. and Sukhanov، نويسنده , , A.، نويسنده ,
Pages :
11
From page :
68
To page :
78
Abstract :
Between Run II commissioning in early 2001 and the end of operations in September 2011, the Tevatron collider delivered 12 fb−1 of p p ¯ collisions at s = 1.96 TeV to the Collider Detector at Fermilab (CDF). During that time, the CDF silicon vertex detector was subject to radiation doses of up to 12 Mrad. After the end of operations, the silicon detector was annealed for 24 days at 18 °C. In this paper, we present a measurement of the change in the bias currents for a subset of sensors during the annealing period. We also introduce a novel method for monitoring the depletion voltage throughout the annealing period. The observed bias current evolution can be characterized by a falling exponential term with time constant τ I = 17.88 ± 0.36 (stat.)±0.25(syst.) days. We observe an average decrease of (27±3)% in the depletion voltage, whose evolution can similarly be described by an exponential time constant of τ V = 6.21 ± 0.21 days . These results are consistent with the Hamburg model within the measurement uncertainties.
Keywords :
Vertex detector , CDF , Silicon , Annealing , Detector operations
Journal title :
Astroparticle Physics
Record number :
2011827
Link To Document :
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