Title of article
Cryogenic operation of silicon detectors
Author/Authors
Collins، نويسنده , , P and Barnett، نويسنده , , I.B.M and Bartalini، نويسنده , , P and Bell، نويسنده , , W and Berglund، نويسنده , , P and de Boer، نويسنده , , W and Buontempo، نويسنده , , S and Borer، نويسنده , , K and Bowcock، نويسنده , , T and Buytaert، نويسنده , , J and Casagrande، نويسنده , , L and Chabaud، نويسنده , , V and Chochula، نويسنده , , P and Cindro، نويسنده , , V and Via، نويسنده , , C.Da and Devine، نويسنده , , S and Dijkstra، نويسنده ,
Pages
9
From page
151
To page
159
Abstract
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014 p/cm2 and of a p–n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.
Keywords
Silicon detectors , Position resolution , Radiation damage
Journal title
Astroparticle Physics
Record number
2012224
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