Local structure in Ge–Si solid-state solutions by combined Ge and Si EXAFS

A new method of studying local structure in disordered binary systems by combined EXAFS is proposed. This consists of determining partial interatomic distances by solution of the system of integral equations describing two EXAFS spectra. This information is used as input data for the determination of partial coordination numbers. The problem in this case is reduced to the solution of the well-conditioned system of linear algebraic equations. We apply this method to obtain local structure information in Ge–Si solid-state solutions.