Electrical properties of contacts on P-type Cd0.8Zn0.2Te crystal surfaces

In this paper effects of surface treatments of p-type Cd0.8Zn0.2Te devices were studied by Atomic Force Microscopy (AFM), I–V measurements, and electrical properties as well as different contact technologies using Au, Al, In and electroless Au. It is shown that electroless Au film deposited by the chemical method can form a heavily doped p+ layer on a smooth surface, which is nearly ohmic on p-type material. Electroless Au gives better contact than evaporated Au, Al or In. A post-annealing treatment of electroless Au film improves the ohmic quality of contacts and enhances the adhesion between contact layer and the Cd0.8Zn0.2Te crystal surface.