Author/Authors :
Aguayo، نويسنده , , E. and Amman، نويسنده , , M. and Avignone III، نويسنده , , F.T. and Barabash، نويسنده , , A.S. and Barton، نويسنده , , P.J. and Beene، نويسنده , , J.R. and Bertrand، نويسنده , , F.E. and Boswell، نويسنده , , M. and Brudanin، نويسنده , , V. and Busch، نويسنده , , M. and Chan، نويسنده , , Y.-D. and Christofferson، نويسنده , , C.D. and Collar، نويسنده , , J.I. and Combs، نويسنده , , D.C. and Cooper، نويسنده , , R.J، نويسنده ,
Abstract :
A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.
