مرکز منطقه ای اطلاع رساني علوم و فناوري - A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics

Title of article :

A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics

Author/Authors :

Allport، نويسنده , , P.P and Andricek، نويسنده , , L and Buttar، نويسنده , , C.M and Carter، نويسنده , , J.R and Costa، نويسنده , , M.J and Drage، نويسنده , , L.M and Dubbs، نويسنده , , T and Goodrick، نويسنده , , M.J and Greenall، نويسنده , , A and Hill، نويسنده , , J.C and Jones، نويسنده , , T and Moorhead، نويسنده , , G and Morgan، نويسنده , , D and OʹShea، نويسنده , , V and Phillips، نويسنده , , P.W and Raine، نويسنده , , C and Riedler، نويسنده , , P and Robinson، نويسنده , , D and Saavedra، نويسنده , , A and Sadrozinski، نويسنده , , H.F-W and Sلnchez، نويسنده , , J and Smith، نويسنده , , N.A and Stapnes، نويسنده , , S and Terada، نويسنده , , S and Unno، نويسنده , , Y، نويسنده ,

Pages :

From page :

297

To page :

306

Abstract :

Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×1014 p cm−2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC.

Keywords :

Irradiated , Silicon , Detectors , microstrip

Journal title :

Astroparticle Physics

Record number :

2012686

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2012686