Author/Authors :
Mattiazzo، نويسنده , , S. and Battaglia، نويسنده , , M. and Bisello، نويسنده , , D. and Caselle، نويسنده , , M. and Chalmet، نويسنده , , P. and Demaria، نويسنده , , N. and Giubilato، نويسنده , , P. and Ikemoto، نويسنده , , Y. and Kloukinas، نويسنده , , K. and Mansuy، نويسنده , , C. and Marchioro، نويسنده , , A. and Mugnier، نويسنده , , H. and Pantano، نويسنده , , D. and Potenza، نويسنده , , A. and Rivetti، نويسنده , , A. and Rousset، نويسنده , , J. and Silvestrin، نويسنده , , L. and Snoeys، نويسنده , , W. and Wyss، نويسنده , , J.، نويسنده ,
Abstract :
We present a monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This maintains the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, but offers charge collection by drift from a depleted region and therefore an excellent signal to noise ratio and a radiation tolerance superior to conventional undepleted MAPS.
ement results obtained with the first prototypes from laser, radioactive source and beam test experiments are described. The excellent signal-to-noise performance is demonstrated by the capability of the device to separate the peaks in the spectrum of a 55Fe source. We will also highlight the interaction between pixel cell design and architecture which points toward a very precise direction in the development of such depleted monolithic pixel devices for high energy physics.
