Author/Authors :
Fochuk، نويسنده , , P. and Panchuk، نويسنده , , O. and Feychuk، نويسنده , , P. N. Shcherbak، نويسنده , , L. and Savitskyi، نويسنده , , A. and Parfenyuk، نويسنده , , O. and Ilashchuk، نويسنده , , M. and Hage-Ali، نويسنده , , M. and Siffert، نويسنده , , P.، نويسنده ,
Abstract :
A brief review of different aspects of In atoms in the CdTe lattice behavior, necessary for scientific preparation of radiation-sensitive material is presented. Data concerning the CdTe–In T–x phase diagram, In segregation, diffusion and solubility as function of stoichiometric relations in CdTe and temperature are included. Low- and high-temperature electrical measurements results are discussed in the framework of compensation phenomena. A short review concerning the manufacture of In-doped CdTe crystals as well as their practical use is included.
Keywords :
In , Electroconductivity , CdTe , Associates , Point Defects , diffusion
