Author/Authors :
Dubeck?، نويسنده , , F. and Darmo، نويسنده , , J. and Krempask?، نويسنده , , M. and Sek??ov?، نويسنده , , M. and Zat’ko، نويسنده , , B. and Ne?as، نويسنده , , V. and Pelfer، نويسنده , , P.G. and Sender?k، نويسنده , , R. and Somora، نويسنده , , M. and Haralabidis، نويسنده , , N. H. Loukas، نويسنده , , D. and Misiakos، نويسنده , , K. and Hlav??، نويسنده , , S. and Koles?r، نويسنده , , F. and Boh??ek، نويسنده , , P. and Ru?ek، نويسنده , , M.، نويسنده ,
Abstract :
Electrical characteristics and detection performance of recently developed and fabricated 32-pixel line array chip for detection of X- and γ-rays named “SAMO” based on semi-insulating GaAs and InP are reported. The chip with dimensions of 7×2.4×(0.2–0.3) mm3 is mounted on a ceramic holder. Single pixel has an active area of 2000×(120–180) μm2 with pitch of 220 μm. Current density of GaAs-based single pixel at a bias voltage of 120 V ranges between 15 and 60 nA/mm2. The threshold voltage ranges between 150 and 500 V. Pulse-height spectra in both, side as well as top irradiation modes measured using 59.5 V and 122 keV γ-sources are demonstrated. The best detection performance observed with GaAs-based SAMO line detector reached charge collection efficiency of 85%, relative energy resolution in HWHM 4%, and detection efficiency in the photopeak 52% (122 keV, 300 K, the side irradiation). Preliminary results obtained with InP-based SAMO line detector are discussed.
Keywords :
Semiconductor , semi-insulating , GaAS , InP , radiation detector
